Rolled-Up Quantum Wells Composed of Nanolayered InGaAs/GaAs Heterostructures as Optical Materials for Quantum Information Technology

Strain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can InGaAs quantum wells modify helicity emitted light by integrating them into rolled-up heterostructures changing their geometrical configuration. Experimental results from photoluminescence excitation spectroscopy demonstrate strong energy shift valence-band states in comparison flat structures, as consequence an inversion heavy-hole with light-hole well. The mixing lead change selection rules for wells, which vanishing spin polarization conduction even under near-resonant conditions. Band calculations are carried out understand changes transitions predict emission absorption spectra given Comparison between experiment theory shows excellent agreement. These observed profound fundamental be applied strategic route develop novel devices information technology.